IRF7341TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF7341TRPBF is a IRF7341TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 55V 4.7A 2W 50mΩ@10V,4.7A 1V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 4.7A
  • Power Dissipation (Pd): 2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@10V,4.7A
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 740pF@25V
  • Total Gate Charge (Qg@Vgs): 36nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.286 grams.

Full Specifications of IRF7341TRPBF

Model NumberIRF7341TRPBF
Model NameInfineon Technologies IRF7341TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description55V 4.7A 2W 50mΩ@10V,4.7A 1V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.286 grams / 0.010088 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)4.7A
Power Dissipation (Pd)2W
Drain Source On Resistance (RDS(on)@Vgs,Id)50mΩ@10V,4.7A
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)740pF@25V
Total Gate Charge (Qg@Vgs)36nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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