Infineon Technologies IRF7341TRPBF is a IRF7341TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 55V 4.7A 2W 50mΩ@10V,4.7A 1V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 55V
- Continuous Drain Current (Id): 4.7A
- Power Dissipation (Pd): 2W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@10V,4.7A
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 740pF@25V
- Total Gate Charge (Qg@Vgs): 36nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.286 grams.
More on IRF7341TRPBF
Full Specifications of IRF7341TRPBF
Model Number | IRF7341TRPBF |
Model Name | Infineon Technologies IRF7341TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 55V 4.7A 2W 50mΩ@10V,4.7A 1V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.286 grams / 0.010088 oz |
Package / Case | SOIC-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 55V |
Continuous Drain Current (Id) | 4.7A |
Power Dissipation (Pd) | 2W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 50mΩ@10V,4.7A |
Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
Type | 2 N-Channel |
Input Capacitance (Ciss@Vds) | 740pF@25V |
Total Gate Charge (Qg@Vgs) | 36nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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