IRF7351TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF7351TRPBF is a IRF7351TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 8A 2W 17.8mΩ@10V,8A 4V@50uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 8A
  • Power Dissipation (Pd): 2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 17.8mΩ@10V,8A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@50uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.33nF@30V
  • Total Gate Charge (Qg@Vgs): 36nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.275 grams.

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Full Specifications of IRF7351TRPBF

Model NumberIRF7351TRPBF
Model NameInfineon Technologies IRF7351TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description60V 8A 2W 17.8mΩ@10V,8A 4V@50uA 2 N-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.275 grams / 0.0097 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)8A
Power Dissipation (Pd)2W
Drain Source On Resistance (RDS(on)@Vgs,Id)17.8mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)@Id)4V@50uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.33nF@30V
Total Gate Charge (Qg@Vgs)36nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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