IRF7379TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF7379TRPBF is a IRF7379TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 45mΩ@5.8A,10V 2.5W 1V@250uA SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 5.8A;4.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 45mΩ@5.8A,10V
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Input Capacitance (Ciss@Vds): 520pF@25V
  • Total Gate Charge (Qg@Vgs): 25nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRF7379TRPBF

Model NumberIRF7379TRPBF
Model NameInfineon Technologies IRF7379TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 45mΩ@5.8A,10V 2.5W 1V@250uA SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)5.8A;4.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)45mΩ@5.8A,10V
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type-
Input Capacitance (Ciss@Vds)520pF@25V
Total Gate Charge (Qg@Vgs)25nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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