IRF7380TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF7380TRPBF is a IRF7380TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 80V 3.6A 73mΩ@10V,2.2A 2W 4V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 3.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 73mΩ@10V,2.2A
  • Power Dissipation (Pd): 2W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 660pF@25V
  • Total Gate Charge (Qg@Vgs): 23nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.286 grams.

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Full Specifications of IRF7380TRPBF

Model NumberIRF7380TRPBF
Model NameInfineon Technologies IRF7380TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description80V 3.6A 73mΩ@10V,2.2A 2W 4V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.286 grams / 0.010088 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)3.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)73mΩ@10V,2.2A
Power Dissipation (Pd)2W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)660pF@25V
Total Gate Charge (Qg@Vgs)23nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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