IRF7389TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF7389TRPBF is a IRF7389TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 29mΩ@10V,5.8A 2.5W 1V@250uA 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 29mΩ@10V,5.8A
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel+1PCSPChannel
  • Input Capacitance (Ciss@Vds): 650pF@25V
  • Total Gate Charge (Qg@Vgs): 33nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.286 grams.

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Full Specifications of IRF7389TRPBF

Model NumberIRF7389TRPBF
Model NameInfineon Technologies IRF7389TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 29mΩ@10V,5.8A 2.5W 1V@250uA 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.286 grams / 0.010088 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)-
Drain Source On Resistance (RDS(on)@Vgs,Id)29mΩ@10V,5.8A
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)650pF@25V
Total Gate Charge (Qg@Vgs)33nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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