IRF7406PBF by Infineon Technologies – Specifications

Infineon Technologies IRF7406PBF is a IRF7406PBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 5.8A 2.5W 45mΩ@2.8A,10V 1V@250uA 1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 5.8A
  • Power Dissipation (Pd): 2.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 45mΩ@2.8A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.1nF@25V
  • Total Gate Charge (Qg@Vgs): 59nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRF7406PBF

Model NumberIRF7406PBF
Model NameInfineon Technologies IRF7406PBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 5.8A 2.5W 45mΩ@2.8A,10V 1V@250uA 1PCSPChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSO-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)5.8A
Power Dissipation (Pd)2.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)45mΩ@2.8A,10V
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.1nF@25V
Total Gate Charge (Qg@Vgs)59nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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