IRF7473PBF by Infineon Technologies – Specifications

Infineon Technologies IRF7473PBF is a IRF7473PBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 6.9A 26mΩ@4.1A,10V 2.5W 5.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 6.9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 26mΩ@4.1A,10V
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 5.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.18nF@25V
  • Total Gate Charge (Qg@Vgs): 61nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF7473PBF

Model NumberIRF7473PBF
Model NameInfineon Technologies IRF7473PBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 6.9A 26mΩ@4.1A,10V 2.5W 5.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSO-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)6.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)26mΩ@4.1A,10V
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)5.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.18nF@25V
Total Gate Charge (Qg@Vgs)61nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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