IRF7601PBF by Infineon Technologies – Specifications

Infineon Technologies IRF7601PBF is a IRF7601PBF from Infineon Technologies, part of the MOSFETs. It is designed for 20V 5.7A 1.8W 35mΩ@3.8A,4.5V 700mV@250uA 1PCSNChannel TSSOP-8-3mm MOSFETs ROHS. This product comes in a TSSOP-8-3mm package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 5.7A
  • Power Dissipation (Pd): 1.8W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 35mΩ@3.8A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 700mV@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 650pF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF7601PBF

Model NumberIRF7601PBF
Model NameInfineon Technologies IRF7601PBF
CategoryMOSFETs
BrandInfineon Technologies
Description20V 5.7A 1.8W 35mΩ@3.8A,4.5V 700mV@250uA 1PCSNChannel TSSOP-8-3mm MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTSSOP-8-3mm
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)5.7A
Power Dissipation (Pd)1.8W
Drain Source On Resistance (RDS(on)@Vgs,Id)35mΩ@3.8A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)700mV@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)650pF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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