Infineon Technologies IRF7739L1TRPBF is a IRF7739L1TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 40V 1mΩ@10V,160A 4V@250uA 1PCSNChannel MG-WDSON-11 MOSFETs ROHS. This product comes in a MG-WDSON-11 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 46A;270A
- Power Dissipation (Pd): 3.8W;125W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1mΩ@10V,160A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 11.88nF@25V
- Total Gate Charge (Qg@Vgs): 330nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRF7739L1TRPBF
Full Specifications of IRF7739L1TRPBF
Model Number | IRF7739L1TRPBF |
Model Name | Infineon Technologies IRF7739L1TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 40V 1mΩ@10V,160A 4V@250uA 1PCSNChannel MG-WDSON-11 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | MG-WDSON-11 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 40V |
Continuous Drain Current (Id) | 46A;270A |
Power Dissipation (Pd) | 3.8W;125W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1mΩ@10V,160A |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 11.88nF@25V |
Total Gate Charge (Qg@Vgs) | 330nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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