IRF7759L2TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF7759L2TRPBF is a IRF7759L2TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 75V 2.3mΩ@10V,96A 4V@250uA 1PCSNChannel DirectFET-L8 MOSFETs ROHS. This product comes in a DirectFET-L8 package and is sold as null. Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 26A;375A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.3mΩ@10V,96A
  • Power Dissipation (Pd): 3.3W;125W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 12.222nF@25V
  • Total Gate Charge (Qg@Vgs): 300nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.235 grams.

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Full Specifications of IRF7759L2TRPBF

Model NumberIRF7759L2TRPBF
Model NameInfineon Technologies IRF7759L2TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description75V 2.3mΩ@10V,96A 4V@250uA 1PCSNChannel DirectFET-L8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.235 grams / 0.008289 oz
Package / CaseDirectFET-L8
Package / Arrange
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)26A;375A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.3mΩ@10V,96A
Power Dissipation (Pd)3.3W;125W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)12.222nF@25V
Total Gate Charge (Qg@Vgs)300nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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