IRF7769L1TRPBFTR by Infineon Technologies – Specifications

Infineon Technologies IRF7769L1TRPBFTR is a IRF7769L1TRPBFTR from Infineon Technologies, part of the MOSFETs. It is designed for 100V 3.5mΩ@74A,10V 4V@250uA 1PCSNChannel DirectFET-L8 MOSFETs ROHS. This product comes in a DirectFET-L8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 20A;124A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.5mΩ@74A,10V
  • Power Dissipation (Pd): 3.3W;125W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 11.56nF@25V
  • Total Gate Charge (Qg@Vgs): 300nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRF7769L1TRPBFTR

Full Specifications of IRF7769L1TRPBFTR

Model NumberIRF7769L1TRPBFTR
Model NameInfineon Technologies IRF7769L1TRPBFTR
CategoryMOSFETs
BrandInfineon Technologies
Description100V 3.5mΩ@74A,10V 4V@250uA 1PCSNChannel DirectFET-L8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDirectFET-L8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)20A;124A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.5mΩ@74A,10V
Power Dissipation (Pd)3.3W;125W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)11.56nF@25V
Total Gate Charge (Qg@Vgs)300nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IRF7769L1TRPBFTR With Other 200 Models

Related Models - IRF7769L1TRPBFTR Alternative

Scroll to Top