IRF7853TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF7853TRPBF is a IRF7853TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 8.3A 18mΩ@10V,8.3A 2.5W 4.9V@100uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 8.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,8.3A
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.9V@100uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.64nF@25V
  • Total Gate Charge (Qg@Vgs): 39nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.286 grams.

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Full Specifications of IRF7853TRPBF

Model NumberIRF7853TRPBF
Model NameInfineon Technologies IRF7853TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 8.3A 18mΩ@10V,8.3A 2.5W 4.9V@100uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.286 grams / 0.010088 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)8.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)18mΩ@10V,8.3A
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)4.9V@100uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.64nF@25V
Total Gate Charge (Qg@Vgs)39nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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