Infineon Technologies IRF7907TRPBF is a IRF7907TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 16.4mΩ@9.1A,10V 2W 2.35V@25uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 9.1A;11A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 16.4mΩ@9.1A,10V
- Power Dissipation (Pd): 2W
- Gate Threshold Voltage (Vgs(th)@Id): 2.35V@25uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 850pF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.275 grams.
More on IRF7907TRPBF
Full Specifications of IRF7907TRPBF
Model Number | IRF7907TRPBF |
Model Name | Infineon Technologies IRF7907TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 30V 16.4mΩ@9.1A,10V 2W 2.35V@25uA 2 N-Channel SOIC-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.275 grams / 0.0097 oz |
Package / Case | SOIC-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 9.1A;11A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 16.4mΩ@9.1A,10V |
Power Dissipation (Pd) | 2W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.35V@25uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 2 N-Channel |
Input Capacitance (Ciss@Vds) | 850pF@15V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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