IRF8010PBF by Infineon Technologies – Specifications

Infineon Technologies IRF8010PBF is a IRF8010PBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 80A 15mΩ@10V,45A 260W 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 15mΩ@10V,45A
  • Power Dissipation (Pd): 260W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.83nF@25V
  • Total Gate Charge (Qg@Vgs): 120nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.861 grams.

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Full Specifications of IRF8010PBF

Model NumberIRF8010PBF
Model NameInfineon Technologies IRF8010PBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 80A 15mΩ@10V,45A 260W 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.861 grams / 0.100919 oz
Package / CaseITO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)15mΩ@10V,45A
Power Dissipation (Pd)260W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.83nF@25V
Total Gate Charge (Qg@Vgs)120nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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