IRF8113PBF by Infineon Technologies – Specifications

Infineon Technologies IRF8113PBF is a IRF8113PBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 17.2A 2.5W 5.6mΩ@17.2A,10V 2.2V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 17.2A
  • Power Dissipation (Pd): 2.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.6mΩ@17.2A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.91nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRF8113PBF

Model NumberIRF8113PBF
Model NameInfineon Technologies IRF8113PBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 17.2A 2.5W 5.6mΩ@17.2A,10V 2.2V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSO-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)17.2A
Power Dissipation (Pd)2.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)5.6mΩ@17.2A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.91nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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