IRF8113TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF8113TRPBF is a IRF8113TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 17.2A 5.6mΩ@10V,17.2A 2.5W 2.2V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 17.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.6mΩ@10V,17.2A
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.91nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.286 grams.

Full Specifications of IRF8113TRPBF

Model NumberIRF8113TRPBF
Model NameInfineon Technologies IRF8113TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 17.2A 5.6mΩ@10V,17.2A 2.5W 2.2V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.286 grams / 0.010088 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)17.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.6mΩ@10V,17.2A
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.91nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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