IRF8252PBF by Infineon Technologies – Specifications

Infineon Technologies IRF8252PBF is a IRF8252PBF from Infineon Technologies, part of the MOSFETs. It is designed for 25V 25A 2.7mΩ@25A,10V 2.5W 2.35V@100uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 25A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.7mΩ@25A,10V
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.35V@100uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.305nF@13V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRF8252PBF

Full Specifications of IRF8252PBF

Model NumberIRF8252PBF
Model NameInfineon Technologies IRF8252PBF
CategoryMOSFETs
BrandInfineon Technologies
Description25V 25A 2.7mΩ@25A,10V 2.5W 2.35V@100uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSO-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)25A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.7mΩ@25A,10V
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)2.35V@100uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.305nF@13V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - IRF8252PBF With Other 200 Models

Related Models - IRF8252PBF Alternative

Scroll to Top