Infineon Technologies IRF8302MTRPBF is a IRF8302MTRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 1.8mΩ@31A,10V 2.35V@150uA 1PCSNChannel MG-WDSON-5 MOSFETs ROHS. This product comes in a MG-WDSON-5 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 31A;190A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8mΩ@31A,10V
- Power Dissipation (Pd): 2.8W;104W
- Gate Threshold Voltage (Vgs(th)@Id): 2.35V@150uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 6.03nF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -40℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.34 grams.
More on IRF8302MTRPBF
Full Specifications of IRF8302MTRPBF
Model Number | IRF8302MTRPBF |
Model Name | Infineon Technologies IRF8302MTRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 30V 1.8mΩ@31A,10V 2.35V@150uA 1PCSNChannel MG-WDSON-5 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.340 grams / 0.011993 oz |
Package / Case | MG-WDSON-5 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 31A;190A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.8mΩ@31A,10V |
Power Dissipation (Pd) | 2.8W;104W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.35V@150uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 6.03nF@15V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -40℃~+150℃@(Tj) |
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