IRF8313PBF by Infineon Technologies – Specifications

Infineon Technologies IRF8313PBF is a IRF8313PBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 9.7A 15.5mΩ@10V,9.7A 2W 2.35V@25uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 9.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 15.5mΩ@10V,9.7A
  • Power Dissipation (Pd): 2W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.35V@25uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.286 grams.

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Full Specifications of IRF8313PBF

Model NumberIRF8313PBF
Model NameInfineon Technologies IRF8313PBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 9.7A 15.5mΩ@10V,9.7A 2W 2.35V@25uA 2 N-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.286 grams / 0.010088 oz
Package / CaseSOIC-8
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)9.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)15.5mΩ@10V,9.7A
Power Dissipation (Pd)2W
Gate Threshold Voltage (Vgs(th)@Id)2.35V@25uA
Type2 N-Channel

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