IRF8313TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF8313TRPBF is a IRF8313TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 9.7A 15.5mΩ@10V,9.7A 2W 2.35V@25uA 2 N-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 9.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 15.5mΩ@10V,9.7A
  • Power Dissipation (Pd): 2W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.35V@25uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 760pF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.286 grams.

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Full Specifications of IRF8313TRPBF

Model NumberIRF8313TRPBF
Model NameInfineon Technologies IRF8313TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 9.7A 15.5mΩ@10V,9.7A 2W 2.35V@25uA 2 N-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.286 grams / 0.010088 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)9.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)15.5mΩ@10V,9.7A
Power Dissipation (Pd)2W
Gate Threshold Voltage (Vgs(th)@Id)2.35V@25uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)760pF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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