Infineon Technologies IRF8707PBF is a IRF8707PBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 11A 2.5W 11.9mΩ@11A,10V 2.35V@25uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 11A
- Power Dissipation (Pd): 2.5W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11.9mΩ@11A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.35V@25uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 760pF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRF8707PBF
Full Specifications of IRF8707PBF
Model Number | IRF8707PBF |
Model Name | Infineon Technologies IRF8707PBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 30V 11A 2.5W 11.9mΩ@11A,10V 2.35V@25uA 1PCSNChannel SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | SO-8 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 11A |
Power Dissipation (Pd) | 2.5W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 11.9mΩ@11A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 2.35V@25uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 760pF@15V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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