Infineon Technologies IRF8915TRPBF is a IRF8915TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 20V 8.9A 18.3mΩ@8.9A,10V 2W 2.5V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 8.9A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 18.3mΩ@8.9A,10V
- Power Dissipation (Pd): 2W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 540pF@10V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.
More on IRF8915TRPBF
Full Specifications of IRF8915TRPBF
Model Number | IRF8915TRPBF |
Model Name | Infineon Technologies IRF8915TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 20V 8.9A 18.3mΩ@8.9A,10V 2W 2.5V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.400 grams / 0.01411 oz |
Package / Case | SOIC-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 8.9A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 18.3mΩ@8.9A,10V |
Power Dissipation (Pd) | 2W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 2 N-Channel |
Input Capacitance (Ciss@Vds) | 540pF@10V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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