Infineon Technologies IRF9362TRPBF is a IRF9362TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 8A 21mΩ@8A,10V 2W 2.4V@25uA 2 P-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 21mΩ@8A,10V
- Power Dissipation (Pd): 2W
- Gate Threshold Voltage (Vgs(th)@Id): 2.4V@25uA
- Type: 2 P-Channel
- Input Capacitance (Ciss@Vds): 1.3nF@25V
- Total Gate Charge (Qg@Vgs): 39nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.12 grams.
More on IRF9362TRPBF
Full Specifications of IRF9362TRPBF
Model Number | IRF9362TRPBF |
Model Name | Infineon Technologies IRF9362TRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 30V 8A 21mΩ@8A,10V 2W 2.4V@25uA 2 P-Channel SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.120 grams / 0.004233 oz |
Package / Case | SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 8A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 21mΩ@8A,10V |
Power Dissipation (Pd) | 2W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.4V@25uA |
Type | 2 P-Channel |
Input Capacitance (Ciss@Vds) | 1.3nF@25V |
Total Gate Charge (Qg@Vgs) | 39nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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