IRF9910TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF9910TRPBF is a IRF9910TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 20V 9.3mΩ@12A,10V 2W 2.55V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 10A;12A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.3mΩ@12A,10V
  • Power Dissipation (Pd): 2W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.55V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 900pF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.275 grams.

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Full Specifications of IRF9910TRPBF

Model NumberIRF9910TRPBF
Model NameInfineon Technologies IRF9910TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description20V 9.3mΩ@12A,10V 2W 2.55V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.275 grams / 0.0097 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)10A;12A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.3mΩ@12A,10V
Power Dissipation (Pd)2W
Gate Threshold Voltage (Vgs(th)@Id)2.55V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)900pF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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