IRF9953TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRF9953TRPBF is a IRF9953TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 2.3A 2W 250mΩ@10V,1A 1V@250uA 2 P-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 2.3A
  • Power Dissipation (Pd): 2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@10V,1A
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 2 P-Channel
  • Input Capacitance (Ciss@Vds): 190pF@15V
  • Total Gate Charge (Qg@Vgs): 12nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.167 grams.

Full Specifications of IRF9953TRPBF

Model NumberIRF9953TRPBF
Model NameInfineon Technologies IRF9953TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 2.3A 2W 250mΩ@10V,1A 1V@250uA 2 P-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.167 grams / 0.005891 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)2.3A
Power Dissipation (Pd)2W
Drain Source On Resistance (RDS(on)@Vgs,Id)250mΩ@10V,1A
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type2 P-Channel
Input Capacitance (Ciss@Vds)190pF@15V
Total Gate Charge (Qg@Vgs)12nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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