IRF9Z34NLPBF by Infineon Technologies – Specifications

Infineon Technologies IRF9Z34NLPBF is a IRF9Z34NLPBF from Infineon Technologies, part of the MOSFETs. It is designed for 55V 19A 100mΩ@10A,10V 4V@250uA 1PCSPChannel TO-262 MOSFETs ROHS. This product comes in a TO-262 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 19A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 100mΩ@10A,10V
  • Power Dissipation (Pd): 3.8W;68W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 620pF@25V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRF9Z34NLPBF

Full Specifications of IRF9Z34NLPBF

Model NumberIRF9Z34NLPBF
Model NameInfineon Technologies IRF9Z34NLPBF
CategoryMOSFETs
BrandInfineon Technologies
Description55V 19A 100mΩ@10A,10V 4V@250uA 1PCSPChannel TO-262 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262
Package / ArrangeBag-packed
BatteryNo
ECCN
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)19A
Drain Source On Resistance (RDS(on)@Vgs,Id)100mΩ@10A,10V
Power Dissipation (Pd)3.8W;68W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)620pF@25V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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