IRF9Z34NPBF by Infineon Technologies – Specifications

Infineon Technologies IRF9Z34NPBF is a IRF9Z34NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 55V 19A 68W 100mΩ@10V,10A 4V@250uA 1PCSPChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 19A
  • Power Dissipation (Pd): 68W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 100mΩ@10V,10A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 620pF@25V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.84 grams.

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Full Specifications of IRF9Z34NPBF

Model NumberIRF9Z34NPBF
Model NameInfineon Technologies IRF9Z34NPBF
CategoryMOSFETs
BrandInfineon Technologies
Description55V 19A 68W 100mΩ@10V,10A 4V@250uA 1PCSPChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.840 grams / 0.100178 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)19A
Power Dissipation (Pd)68W
Drain Source On Resistance (RDS(on)@Vgs,Id)100mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)620pF@25V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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