IRFAF30 by Infineon Technologies – Specifications

Infineon Technologies IRFAF30 is a IRFAF30 from Infineon Technologies, part of the MOSFETs. It is designed for 900V 2A 75W 4.6Ω@2A,10V 4V@250uA 1PCSNChannel TO-204AA(TO-3) MOSFETs ROHS. This product comes in a TO-204AA(TO-3) package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 900V
  • Continuous Drain Current (Id): 2A
  • Power Dissipation (Pd): 75W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.6Ω@2A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1nF@25V
  • Total Gate Charge (Qg@Vgs): 66nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRFAF30

Full Specifications of IRFAF30

Model NumberIRFAF30
Model NameInfineon Technologies IRFAF30
CategoryMOSFETs
BrandInfineon Technologies
Description900V 2A 75W 4.6Ω@2A,10V 4V@250uA 1PCSNChannel TO-204AA(TO-3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-204AA(TO-3)
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)900V
Continuous Drain Current (Id)2A
Power Dissipation (Pd)75W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.6Ω@2A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1nF@25V
Total Gate Charge (Qg@Vgs)66nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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