IRFAF40 by Infineon Technologies – Specifications

Infineon Technologies IRFAF40 is a IRFAF40 from Infineon Technologies, part of the MOSFETs. It is designed for 900V 4.3A 125W 2.9Ω@4.3A,10V 4V@250uA 1PCSNChannel TO-204AA(TO-3) MOSFETs ROHS. This product comes in a TO-204AA(TO-3) package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 900V
  • Continuous Drain Current (Id): 4.3A
  • Power Dissipation (Pd): 125W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9Ω@4.3A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.5nF@25V
  • Total Gate Charge (Qg@Vgs): 120nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRFAF40

Model NumberIRFAF40
Model NameInfineon Technologies IRFAF40
CategoryMOSFETs
BrandInfineon Technologies
Description900V 4.3A 125W 2.9Ω@4.3A,10V 4V@250uA 1PCSNChannel TO-204AA(TO-3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-204AA(TO-3)
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)900V
Continuous Drain Current (Id)4.3A
Power Dissipation (Pd)125W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.9Ω@4.3A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.5nF@25V
Total Gate Charge (Qg@Vgs)120nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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