IRFB11N50APBF by Infineon Technologies – Specifications

Infineon Technologies IRFB11N50APBF is a IRFB11N50APBF from Infineon Technologies, part of the MOSFETs. It is designed for 500V 11A 520mΩ@10V,6.6A 170W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 11A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 520mΩ@10V,6.6A
  • Power Dissipation (Pd): 170W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.75 grams.

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Full Specifications of IRFB11N50APBF

Model NumberIRFB11N50APBF
Model NameInfineon Technologies IRFB11N50APBF
CategoryMOSFETs
BrandInfineon Technologies
Description500V 11A 520mΩ@10V,6.6A 170W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.750 grams / 0.097003 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)11A
Drain Source On Resistance (RDS(on)@Vgs,Id)520mΩ@10V,6.6A
Power Dissipation (Pd)170W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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