IRFB260NPBF by Infineon Technologies – Specifications

Infineon Technologies IRFB260NPBF is a IRFB260NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 56A 380W 40mΩ@10V,34A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 56A
  • Power Dissipation (Pd): 380W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 40mΩ@10V,34A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.22nF@25V
  • Total Gate Charge (Qg@Vgs): 220nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.75 grams.

More on IRFB260NPBF

Full Specifications of IRFB260NPBF

Model NumberIRFB260NPBF
Model NameInfineon Technologies IRFB260NPBF
CategoryMOSFETs
BrandInfineon Technologies
Description200V 56A 380W 40mΩ@10V,34A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.750 grams / 0.097003 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)56A
Power Dissipation (Pd)380W
Drain Source On Resistance (RDS(on)@Vgs,Id)40mΩ@10V,34A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.22nF@25V
Total Gate Charge (Qg@Vgs)220nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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