IRFB3207ZGPBF by Infineon Technologies – Specifications

Infineon Technologies IRFB3207ZGPBF is a IRFB3207ZGPBF from Infineon Technologies, part of the MOSFETs. It is designed for 75V 120A 4.1mΩ@75A,10V 300W 4V@150uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.1mΩ@75A,10V
  • Power Dissipation (Pd): 300W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@150uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.92nF@50V
  • Total Gate Charge (Qg@Vgs): 170nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3 grams.

Full Specifications of IRFB3207ZGPBF

Model NumberIRFB3207ZGPBF
Model NameInfineon Technologies IRFB3207ZGPBF
CategoryMOSFETs
BrandInfineon Technologies
Description75V 120A 4.1mΩ@75A,10V 300W 4V@150uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.000 grams / 0.105822 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.1mΩ@75A,10V
Power Dissipation (Pd)300W
Gate Threshold Voltage (Vgs(th)@Id)4V@150uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.92nF@50V
Total Gate Charge (Qg@Vgs)170nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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