IRFB38N20DPBF by Infineon Technologies – Specifications

Infineon Technologies IRFB38N20DPBF is a IRFB38N20DPBF from Infineon Technologies, part of the MOSFETs. It is designed for 200V 43A 54mΩ@10V,26A 5V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 43A
  • Power Dissipation (Pd): 3.8W;300W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 54mΩ@10V,26A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.9nF@25V
  • Total Gate Charge (Qg@Vgs): 91nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.748 grams.

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Full Specifications of IRFB38N20DPBF

Model NumberIRFB38N20DPBF
Model NameInfineon Technologies IRFB38N20DPBF
CategoryMOSFETs
BrandInfineon Technologies
Description200V 43A 54mΩ@10V,26A 5V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.748 grams / 0.096933 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)43A
Power Dissipation (Pd)3.8W;300W
Drain Source On Resistance (RDS(on)@Vgs,Id)54mΩ@10V,26A
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.9nF@25V
Total Gate Charge (Qg@Vgs)91nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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