IRFB4019PBF by Infineon Technologies – Specifications

Infineon Technologies IRFB4019PBF is a IRFB4019PBF from Infineon Technologies, part of the MOSFETs. It is designed for 150V 17A 95mΩ@10V,10A 80W 4.9V@50uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 17A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 95mΩ@10V,10A
  • Power Dissipation (Pd): 80W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.9V@50uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 800pF@50V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

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Full Specifications of IRFB4019PBF

Model NumberIRFB4019PBF
Model NameInfineon Technologies IRFB4019PBF
CategoryMOSFETs
BrandInfineon Technologies
Description150V 17A 95mΩ@10V,10A 80W 4.9V@50uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)17A
Drain Source On Resistance (RDS(on)@Vgs,Id)95mΩ@10V,10A
Power Dissipation (Pd)80W
Gate Threshold Voltage (Vgs(th)@Id)4.9V@50uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)800pF@50V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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