IRFB4137PBF by Infineon Technologies – Specifications

Infineon Technologies IRFB4137PBF is a IRFB4137PBF from Infineon Technologies, part of the MOSFETs. It is designed for 300V 38A 69mΩ@10V,24A 341W 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 300V
  • Continuous Drain Current (Id): 38A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 69mΩ@10V,24A
  • Power Dissipation (Pd): 341W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.168nF@50V
  • Total Gate Charge (Qg@Vgs): 125nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.726 grams.

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Full Specifications of IRFB4137PBF

Model NumberIRFB4137PBF
Model NameInfineon Technologies IRFB4137PBF
CategoryMOSFETs
BrandInfineon Technologies
Description300V 38A 69mΩ@10V,24A 341W 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.726 grams / 0.096157 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)300V
Continuous Drain Current (Id)38A
Drain Source On Resistance (RDS(on)@Vgs,Id)69mΩ@10V,24A
Power Dissipation (Pd)341W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.168nF@50V
Total Gate Charge (Qg@Vgs)125nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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