IRFB4310PBF by Infineon Technologies – Specifications

Infineon Technologies IRFB4310PBF is a IRFB4310PBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 130A 300W 7mΩ@10V,75A 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 130A
  • Power Dissipation (Pd): 300W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@10V,75A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 7.67nF@50V
  • Total Gate Charge (Qg@Vgs): 250nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3 grams.

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Full Specifications of IRFB4310PBF

Model NumberIRFB4310PBF
Model NameInfineon Technologies IRFB4310PBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 130A 300W 7mΩ@10V,75A 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.000 grams / 0.105822 oz
Package / CaseITO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)130A
Power Dissipation (Pd)300W
Drain Source On Resistance (RDS(on)@Vgs,Id)7mΩ@10V,75A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)7.67nF@50V
Total Gate Charge (Qg@Vgs)250nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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