IRFB4332PBF by Infineon Technologies – Specifications

Infineon Technologies IRFB4332PBF is a IRFB4332PBF from Infineon Technologies, part of the MOSFETs. It is designed for 250V 60A 33mΩ@10V,35A 390W 5V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@10V,35A
  • Power Dissipation (Pd): 390W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.86nF@25V
  • Total Gate Charge (Qg@Vgs): 150nC@10V
  • Operating Temperature: -40℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.76 grams.

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Full Specifications of IRFB4332PBF

Model NumberIRFB4332PBF
Model NameInfineon Technologies IRFB4332PBF
CategoryMOSFETs
BrandInfineon Technologies
Description250V 60A 33mΩ@10V,35A 390W 5V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.760 grams / 0.097356 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)250V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)33mΩ@10V,35A
Power Dissipation (Pd)390W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.86nF@25V
Total Gate Charge (Qg@Vgs)150nC@10V
Operating Temperature-40℃~+175℃@(Tj)

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