IRFB7434PBF by Infineon Technologies – Specifications

Infineon Technologies IRFB7434PBF is a IRFB7434PBF from Infineon Technologies, part of the MOSFETs. It is designed for 40V 195A 1.6mΩ@10V,100A 294W 3.9V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 195A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.6mΩ@10V,100A
  • Power Dissipation (Pd): 294W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 10.82nF@25V
  • Total Gate Charge (Qg@Vgs): 324nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.785 grams.

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Full Specifications of IRFB7434PBF

Model NumberIRFB7434PBF
Model NameInfineon Technologies IRFB7434PBF
CategoryMOSFETs
BrandInfineon Technologies
Description40V 195A 1.6mΩ@10V,100A 294W 3.9V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.785 grams / 0.098238 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)195A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.6mΩ@10V,100A
Power Dissipation (Pd)294W
Gate Threshold Voltage (Vgs(th)@Id)3.9V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)10.82nF@25V
Total Gate Charge (Qg@Vgs)324nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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