Infineon Technologies IRFB7530PBF is a IRFB7530PBF from Infineon Technologies, part of the MOSFETs. It is designed for 60V 195A 2mΩ@100A,10V 375W 3.7V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 195A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2mΩ@100A,10V
- Power Dissipation (Pd): 375W
- Gate Threshold Voltage (Vgs(th)@Id): 3.7V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 13.703nF@25V
- Total Gate Charge (Qg@Vgs): 411nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.9 grams.
More on IRFB7530PBF
Full Specifications of IRFB7530PBF
Model Number | IRFB7530PBF |
Model Name | Infineon Technologies IRFB7530PBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 60V 195A 2mΩ@100A,10V 375W 3.7V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.900 grams / 0.102295 oz |
Package / Case | TO-220AB |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 195A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 2mΩ@100A,10V |
Power Dissipation (Pd) | 375W |
Gate Threshold Voltage (Vgs(th)@Id) | 3.7V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 13.703nF@25V |
Total Gate Charge (Qg@Vgs) | 411nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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