IRFB7730PBF by Infineon Technologies – Specifications

Infineon Technologies IRFB7730PBF is a IRFB7730PBF from Infineon Technologies, part of the MOSFETs. It is designed for 75V 195A 375W 2.6mΩ@10V,100A 3.7V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 195A
  • Power Dissipation (Pd): 375W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.6mΩ@10V,100A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.7V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 13.66nF@25V
  • Total Gate Charge (Qg@Vgs): 407nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.873 grams.

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Full Specifications of IRFB7730PBF

Model NumberIRFB7730PBF
Model NameInfineon Technologies IRFB7730PBF
CategoryMOSFETs
BrandInfineon Technologies
Description75V 195A 375W 2.6mΩ@10V,100A 3.7V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.873 grams / 0.101342 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)195A
Power Dissipation (Pd)375W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.6mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)@Id)3.7V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)13.66nF@25V
Total Gate Charge (Qg@Vgs)407nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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