IRFBE30PBF by Infineon Technologies – Specifications

Infineon Technologies IRFBE30PBF is a IRFBE30PBF from Infineon Technologies, part of the MOSFETs. It is designed for 800V 4.1A 3Ω@10V,2.5A 125W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 4.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3Ω@10V,2.5A
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.75 grams.

More on IRFBE30PBF

Full Specifications of IRFBE30PBF

Model NumberIRFBE30PBF
Model NameInfineon Technologies IRFBE30PBF
CategoryMOSFETs
BrandInfineon Technologies
Description800V 4.1A 3Ω@10V,2.5A 125W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.750 grams / 0.097003 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)4.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)3Ω@10V,2.5A
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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