IRFH4251DTRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFH4251DTRPBF is a IRFH4251DTRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 25V 64A 3.2mΩ@10V,30A 31W 2.1V@35uA 2 N-Channel TISON-8-EP(6x5) MOSFETs ROHS. This product comes in a TISON-8-EP(6x5) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Configuration: 共源
  • Continuous Drain Current (Id): 64A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.2mΩ@10V,30A
  • Power Dissipation (Pd): 31W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.1V@35uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRFH4251DTRPBF

Model NumberIRFH4251DTRPBF
Model NameInfineon Technologies IRFH4251DTRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description25V 64A 3.2mΩ@10V,30A 31W 2.1V@35uA 2 N-Channel TISON-8-EP(6x5) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTISON-8-EP(6x5)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Configuration共源
Continuous Drain Current (Id)64A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.2mΩ@10V,30A
Power Dissipation (Pd)31W
Gate Threshold Voltage (Vgs(th)@Id)2.1V@35uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-
Operating Temperature-

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