IRFH4253DTRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFH4253DTRPBF is a IRFH4253DTRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 25V 3.2mΩ@30A,10V 2.1V@35uA 2 N-Channel PQFN-8(5x6) MOSFETs ROHS. This product comes in a PQFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 64A;145A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.2mΩ@30A,10V
  • Power Dissipation (Pd): 31W;50W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.1V@35uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.314nF@13V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.16 grams.

Full Specifications of IRFH4253DTRPBF

Model NumberIRFH4253DTRPBF
Model NameInfineon Technologies IRFH4253DTRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description25V 3.2mΩ@30A,10V 2.1V@35uA 2 N-Channel PQFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.160 grams / 0.005644 oz
Package / CasePQFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)64A;145A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.2mΩ@30A,10V
Power Dissipation (Pd)31W;50W
Gate Threshold Voltage (Vgs(th)@Id)2.1V@35uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.314nF@13V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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