IRFH4257DTRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFH4257DTRPBF is a IRFH4257DTRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 25V 25A 3.4mΩ@25A,10V 2.1V@35uA 2 N-Channel PowerVDFN-8 MOSFETs ROHS. This product comes in a PowerVDFN-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 25A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.4mΩ@25A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.1V@35uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.321nF@13V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRFH4257DTRPBF

Model NumberIRFH4257DTRPBF
Model NameInfineon Technologies IRFH4257DTRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description25V 25A 3.4mΩ@25A,10V 2.1V@35uA 2 N-Channel PowerVDFN-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerVDFN-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)25A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.4mΩ@25A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.1V@35uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.321nF@13V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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