IRFH5010TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFH5010TRPBF is a IRFH5010TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 9mΩ@50A,10V 4V@150uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS. This product comes in a PQFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 13A;100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@50A,10V
  • Power Dissipation (Pd): 3.6W;250W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@150uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.34nF@25V
  • Total Gate Charge (Qg@Vgs): 98nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.16 grams.

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Full Specifications of IRFH5010TRPBF

Model NumberIRFH5010TRPBF
Model NameInfineon Technologies IRFH5010TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 9mΩ@50A,10V 4V@150uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.160 grams / 0.005644 oz
Package / CasePQFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)13A;100A
Drain Source On Resistance (RDS(on)@Vgs,Id)9mΩ@50A,10V
Power Dissipation (Pd)3.6W;250W
Gate Threshold Voltage (Vgs(th)@Id)4V@150uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.34nF@25V
Total Gate Charge (Qg@Vgs)98nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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