IRFH5250TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFH5250TRPBF is a IRFH5250TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 25V 1.15mΩ@50A,10V 2.35V@150uA 1PCSNChannel PQFN(5x6) MOSFETs ROHS. This product comes in a PQFN(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 45A;100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.15mΩ@50A,10V
  • Power Dissipation (Pd): 3.6W;160W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.35V@150uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 7.174nF@13V
  • Total Gate Charge (Qg@Vgs): 110nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.45 grams.

Full Specifications of IRFH5250TRPBF

Model NumberIRFH5250TRPBF
Model NameInfineon Technologies IRFH5250TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description25V 1.15mΩ@50A,10V 2.35V@150uA 1PCSNChannel PQFN(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.450 grams / 0.015873 oz
Package / CasePQFN(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)45A;100A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.15mΩ@50A,10V
Power Dissipation (Pd)3.6W;160W
Gate Threshold Voltage (Vgs(th)@Id)2.35V@150uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)7.174nF@13V
Total Gate Charge (Qg@Vgs)110nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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