IRFHE4250DTRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFHE4250DTRPBF is a IRFHE4250DTRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 25V 156W 2 N-Channel PQFN-32(6x6) MOSFETs ROHS. This product comes in a PQFN-32(6x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 86A;303A
  • Power Dissipation (Pd): 156W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.75mΩ@27A,10V;0.9mΩ@27A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.1V@35uA;2.1V@100uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.735nF@13V;4.765nF@13V
  • Total Gate Charge (Qg@Vgs): [email protected];[email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRFHE4250DTRPBF

Model NumberIRFHE4250DTRPBF
Model NameInfineon Technologies IRFHE4250DTRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description25V 156W 2 N-Channel PQFN-32(6x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePQFN-32(6x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)86A;303A
Power Dissipation (Pd)156W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.75mΩ@27A,10V;0.9mΩ@27A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.1V@35uA;2.1V@100uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.735nF@13V;4.765nF@13V
Total Gate Charge (Qg@Vgs)[email protected];[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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