Infineon Technologies IRFHE4250DTRPBF is a IRFHE4250DTRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 25V 156W 2 N-Channel PQFN-32(6x6) MOSFETs ROHS. This product comes in a PQFN-32(6x6) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 25V
- Continuous Drain Current (Id): 86A;303A
- Power Dissipation (Pd): 156W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.75mΩ@27A,10V;0.9mΩ@27A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.1V@35uA;2.1V@100uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 1.735nF@13V;4.765nF@13V
- Total Gate Charge (Qg@Vgs): [email protected];[email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRFHE4250DTRPBF
Full Specifications of IRFHE4250DTRPBF
Model Number | IRFHE4250DTRPBF |
Model Name | Infineon Technologies IRFHE4250DTRPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 25V 156W 2 N-Channel PQFN-32(6x6) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | PQFN-32(6x6) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 25V |
Continuous Drain Current (Id) | 86A;303A |
Power Dissipation (Pd) | 156W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.75mΩ@27A,10V;0.9mΩ@27A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 2.1V@35uA;2.1V@100uA |
Type | 2 N-Channel |
Input Capacitance (Ciss@Vds) | 1.735nF@13V;4.765nF@13V |
Total Gate Charge (Qg@Vgs) | [email protected];[email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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