IRFHM3911TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFHM3911TRPBF is a IRFHM3911TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 115mΩ@6.3A,10V 4V@35uA 1PCSNChannel PQFN-8L(3.3x3.3) MOSFETs ROHS. This product comes in a PQFN-8L(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 3.2A;20A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 115mΩ@6.3A,10V
  • Power Dissipation (Pd): 2.8W;29W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@35uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 760pF@50V
  • Total Gate Charge (Qg@Vgs): 26nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.3 grams.

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Full Specifications of IRFHM3911TRPBF

Model NumberIRFHM3911TRPBF
Model NameInfineon Technologies IRFHM3911TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 115mΩ@6.3A,10V 4V@35uA 1PCSNChannel PQFN-8L(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.300 grams / 0.010582 oz
Package / CasePQFN-8L(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)3.2A;20A
Drain Source On Resistance (RDS(on)@Vgs,Id)115mΩ@6.3A,10V
Power Dissipation (Pd)2.8W;29W
Gate Threshold Voltage (Vgs(th)@Id)4V@35uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)760pF@50V
Total Gate Charge (Qg@Vgs)26nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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