IRFHM4234TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFHM4234TRPBF is a IRFHM4234TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 25V 20A 4.4mΩ@30A,10V 2.1V@25uA 1PCSNChannel TQFN-8-EP MOSFETs ROHS. This product comes in a TQFN-8-EP package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 20A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.4mΩ@30A,10V
  • Power Dissipation (Pd): 2.8W;28W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.1V@25uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.011nF@13V
  • Total Gate Charge (Qg@Vgs): 17nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRFHM4234TRPBF

Model NumberIRFHM4234TRPBF
Model NameInfineon Technologies IRFHM4234TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description25V 20A 4.4mΩ@30A,10V 2.1V@25uA 1PCSNChannel TQFN-8-EP MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTQFN-8-EP
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)20A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.4mΩ@30A,10V
Power Dissipation (Pd)2.8W;28W
Gate Threshold Voltage (Vgs(th)@Id)2.1V@25uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.011nF@13V
Total Gate Charge (Qg@Vgs)17nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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