IRFHM830TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRFHM830TRPBF is a IRFHM830TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 3.8mΩ@10V,20A 2.35V@50uA 1PCSNChannel PQFN(3.3x3.3) MOSFETs ROHS. This product comes in a PQFN(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 21A;40A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.8mΩ@10V,20A
  • Power Dissipation (Pd): 2.7W;37W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.35V@50uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.155nF@25V
  • Total Gate Charge (Qg@Vgs): 31nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.128 grams.

Full Specifications of IRFHM830TRPBF

Model NumberIRFHM830TRPBF
Model NameInfineon Technologies IRFHM830TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 3.8mΩ@10V,20A 2.35V@50uA 1PCSNChannel PQFN(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.128 grams / 0.004515 oz
Package / CasePQFN(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)21A;40A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.8mΩ@10V,20A
Power Dissipation (Pd)2.7W;37W
Gate Threshold Voltage (Vgs(th)@Id)2.35V@50uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.155nF@25V
Total Gate Charge (Qg@Vgs)31nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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